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mar. 2002 outline drawing dimensions in mm to-220f type name voltage class 3.2 0.2 1.3 max 0.8 2.54 13.5 min 3.6 5.0 1.2 8.5 10.5 max 5.2 4.5 23 1 2 1 3 1 2 3 t 1 terminal t 2 terminal gate terminal 17 2.54 2.8 0.5 2.6 ? measurement point of case temperature application contactless ac switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications mitsubishi semiconductor ? triac ? bcr3pm low power use insulated type, planar passivation type bcr3pm ? 1. gate open. ? t (rms) ........................................................................ 3a ? drm ....................................................................... 600v ? fgt ! , i rgt ! , i rgt # .......................... 20ma (10ma) ? 5 ? iso ........................................................................ 2000v ul recognized: yellow card no.e80276(n) file no. e80271 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage conditions commercial frequency, sine full wave 360 conduction, t c =107 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =25 c, ac 1 minute, t 1 ?t 2 ?g terminal to case unit a a a 2 s w w v a c c g v ratings 3.0 30 3.7 3 0.3 6 0.5 ?0 ~ +125 ?0 ~ +125 2.0 2000 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720 refer to the page 6 as to the product guaranteed maximum junction temperature 150 c
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c mitsubishi semiconductor ? triac ? bcr3pm low power use insulated type, planar passivation type symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =4.5a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to case ? 3 t j =125 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics limits min. 0.2 5 max. 2.0 1.5 1.5 1.5 1.5 20 ? 5 20 ? 5 20 ? 5 4.5 ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5 c/w. ? 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. ? 5. high sensitivity (i gt 10ma) is also available. (i gt item 1 ) performance curves test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c = 1.5a/ms 3. peak off-state voltage v d =400v refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 3.8 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 1 t j = 25 c 10 0 23 5710 1 23 5710 2 44 30 35 20 25 10 15 5 40 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 4
mar. 2002 mitsubishi semiconductor ? triac ? bcr3pm low power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 160 120 100 60 20 0 4.0 0 0.5 1.5 2.5 3.5 40 80 140 1.0 2.0 3.0 10 0 23 10 0 5710 1 23 5710 2 23 5710 3 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 v gd = 0.2v i fgt i, i rgt iii i rgt i v gt p g(av) = 0.3w p gm = 3w i gm = 0.5a 23 10 1 5710 0 23 5710 1 23 5710 2 4.0 4.5 5.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 23 10 2 5710 3 23 57 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 i fgt i, i rgt i i rgt iii 5.0 4.0 3.0 2.0 1.0 4.5 3.5 2.5 1.5 0.5 0 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 gate voltage (v) gate current (ma) typical example gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) typical example gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/w) conduction time (cycles at 60hz) 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) curves apply regardless of conduction angle 360 conduction resistive, inductive loads allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) gate characteristics ( , ? and ?? )
mar. 2002 mitsubishi semiconductor ? triac ? bcr3pm low power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 160 100 80 40 20 0 140 40 40 60 20 0 20 60 80 140 100120 60 120 140 40 40 60 20 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 160 120 100 60 20 0 3.2 1.6 0.4 0 0.8 1.2 2.0 2.4 2.8 40 80 140 160 120 100 60 20 0 8 0 1357 40 80 140 246 60 60 t2.3 100 100 t2.3 120 120 t2.3 140 60 20 20 60 100 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 40 0 40 80 120 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) all fins are black painted aluminum and greased natural convection curves apply regardless of conduction angle resistive, inductive loads allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) natural convection no fins curves apply regardless of conduction angle resistive, inductive loads typical example repetitive peak off-state current vs. junction temperature junction temperature ( c) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) typical example holding current vs. junction temperature junction temperature ( c) 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c ) laching current vs. junction temperature laching current (ma) junction temperature ( c) t 2 + , g + t 2 , g ? ? ? typical example t 2 + , g typical example distribution typical example breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c )
mar. 2002 mitsubishi semiconductor ? triac ? bcr3pm low power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i 10 0 7 5 3 2 10 0 23 5710 1 10 1 7 7 5 3 2 23 5710 2 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 125 c i quadrant iii quadrant commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz iii quadrant i quadrant minimum charac- teristics value gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
mar. 2002 outline drawing dimensions in mm to-220f type name voltage class 3.2 0.2 1.3 max 0.8 2.54 13.5 min 3.6 5.0 1.2 8.5 10.5 max 5.2 4.5 23 1 2 1 3 1 2 3 t 1 terminal t 2 terminal gate terminal 17 2.54 2.8 0.5 2.6 ? measurement point of case temperature application contactless ac switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications (warning) 1. refer to the recommended circuit values around the triac before using. 2. be sure to exchange the specification before using. if not exchanged, general triacs will be supplied. mitsubishi semiconductor ? triac ? bcr3pm low power use insulated type, planar passivation type bcr3pm ? 1. gate open. i t (rms) ........................................................................ 3a v drm ....................................................................... 600v i fgt ! , i rgt ! , i rgt # .......................... 20ma (10ma) ? 5 v iso ........................................................................ 2000v ul recognized: yellow card no.e80276(n) file no. e80271 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage conditions commercial frequency, sine full wave 360 conduction, t c =132 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =25 c, ac 1 minute, t 1 t 2 g terminal to case unit a a a 2 s w w v a c c g v ratings 3.0 30 3.7 3 0.3 6 0.5 40 ~ +150 40 ~ +150 2.0 2000 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720 the product guaranteed maximum junction temperature 150 c (see warning.)
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c mitsubishi semiconductor ? triac ? bcr3pm low power use insulated type, planar passivation type symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =150 c, v drm applied t c =25 c, i tm =4.5a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c/150 c, v d =1/2v drm junction to case ? 3 t j =125 c/150 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics limits min. 0.2/0.1 5/1 max. 2.0 1.5 1.5 1.5 1.5 20 ? 5 20 ? 5 20 ? 5 4.5 ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5 c/w. ? 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. ? 5. high sensitivity (i gt 10ma) is also available. (i gt item 1 ) performance curves test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c/150 c 2. rate of decay of on-state commutating current (di/dt) c = 1.5a/ms 3. peak off-state voltage v d =400v the product guaranteed maximum junction temperature 150 c (see warning.) 0.5 1.5 2.5 3.5 1.0 2.0 3.0 4.0 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? t j = 25 c t j = 150 c 10 0 23 5710 1 23 5710 2 44 30 35 20 25 10 15 5 40 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 4
mar. 2002 mitsubishi semiconductor ? triac ? bcr3pm low power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 160 120 100 60 20 0 4.0 0 0.5 1.5 2.5 3.5 40 80 140 1.0 2.0 3.0 10 0 23 10 0 5710 1 23 5710 2 23 5710 3 7 5 3 2 10 1 7 5 3 5 2 7 5 10 ? 3 2 v gd = 0.1v i fgt i, i rgt iii i rgt i v gt p g(av) = 0.3w p gm = 3w i gm = 0.5a 23 10 ? 5710 0 23 5710 1 23 5710 2 4.0 4.5 5.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 23 10 2 5710 3 23 57 5.0 4.0 3.0 2.0 1.0 4.5 3.5 2.5 1.5 0.5 0 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 1 10 3 7 5 3 2 10 2 7 5 4 4 3 2 ?0 ?0 20 60 100 160 140 ?0 0 40 80 120 i fgt i, i rgt i i rgt iii ?0 ?0 20 60 100 160 140 ?0 0 40 80 120 10 1 10 3 7 5 3 2 10 2 7 5 3 2 4 4 gate voltage (v) gate current (ma) typical example gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) typical example gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/ w) conduction time (cycles at 60hz) 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) curves apply regardless of conduction angle 360 conduction resistive, inductive loads allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) gate characteristics ( , ? and ?? )
mar. 2002 mitsubishi semiconductor ? triac ? bcr3pm low power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 3.2 2.8 2.4 160 120 100 60 20 0 0 0.4 1.2 2.0 40 80 140 0.8 1.6 10 3 7 5 3 2 10 2 10 4 7 5 3 2 10 5 7 5 3 2 10 6 7 5 3 2 60 20 20 60 100 160 140 40 0 40 80 120 10 3 5 7 3 2 5 4 4 7 3 2 10 2 10 1 60 20 20 60 100 160 140 40 0 40 80 120 10 3 7 5 3 2 7 5 3 2 7 5 3 2 10 2 10 1 10 0 60 20 20 60 100 160 140 40 0 40 80 120 160 100 80 40 20 0 140 60 120 60 20 20 60 100 160 140 40 0 40 80 120 160 120 100 60 20 0 8 0 1357 40 80 140 246 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) all fins are black painted aluminum and greased natural convection curves apply regardless of conduction angle resistive, inductive loads allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) natural convection no fins curves apply regardless of conduction angle resistive, inductive loads typical example repetitive peak off-state current vs. junction temperature junction temperature ( c) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) typical example holding current vs. junction temperature junction temperature ( c) 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c ) laching current vs. junction temperature laching current (ma) junction temperature ( c) t 2 + , g + t 2 , g ? ? ? typical example t 2 + , g typical example distribution typical example breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) 60 60 t2.3 100 100 t2.3 120 120 t2.3
mar. 2002 mitsubishi semiconductor ? triac ? bcr3pm low power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 7 5 3 2 10 0 23 5710 1 10 1 7 7 5 3 2 23 5710 2 10 0 7 5 3 2 10 0 23 5710 1 10 1 7 7 5 3 2 23 5710 2 10 0 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i breakover voltage vs. rate of rise of off-state voltage (t j = 125 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 125 c i quadrant iii quadrant breakover voltage vs. rate of rise of off-state voltage (t j = 150 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 150 c i quadrant iii quadrant commutation characteristics (t j = 125 c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value commutation characteristics (t j = 150 c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t j = 150 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum characteristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example
mar. 2002 mitsubishi semiconductor ? triac ? bcr3pm low power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) c 1 c 1 = 0.1~0.47 f r 1 = 47~100 ? c 0 = 0.1 f r 0 = 100 ? c 0 r 0 r 1 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v load recommended circuit values around the triac test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits

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